Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

TL;DR

This paper investigates the residual carrier density near the Dirac point in graphene using quantum capacitance measurements, revealing insights into impurity effects and mobility variations.

Contribution

It demonstrates that quantum capacitance provides a more accurate estimate of residual carrier density than conductivity measurements in graphene.

Findings

CQ at the DP is finite and temperature-independent

Residual carriers are induced by charged impurities

CQ measurement offers a quantitative estimate of n*

Abstract

We discuss the residual carrier density (n*) near the Dirac point (DP) in graphene estimated by quantum capacitance (CQ) and conductivity measurements. The CQ at the DP has a finite value and is independent of the temperature. A similar behavior is also observed for the conductivity at the DP, because their origin is residual carriers induced externally by charged impurities. The n* extracted from CQ, however, is often smaller than that from the conductivity, suggesting that the mobility in the puddle region is lower than that in the linear region. The CQ measurement should be employed for estimating n* quantitatively.