Radiation Hardness of Graphene and MoS2 Field Effect Devices Against Swift Heavy Ion Irradiation

TL;DR

This study examines how swift heavy ion irradiation affects the structural and electrical integrity of graphene and MoS2 field effect transistors, revealing MoS2 devices are destroyed at high fluence while graphene devices survive with degraded performance.

Contribution

It provides the first comparative analysis of radiation effects on graphene and MoS2 transistors under heavy ion irradiation.

Findings

MoS2 transistors are destroyed at high fluence levels.

Graphene devices remain operational but with reduced performance.

Significant structural and electrical changes occur post-irradiation.

Abstract

We have investigated the deterioration of field effect transistors based on twodimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U228+2 ions using three different fluences. By electrical characterization, atomic force microscopy and Raman spectroscopy we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 x 102^11 ions/cm^2, the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance.