Intrinsic Spin Hall Effect at Oxide Interfaces: a Simple Model
Lorien H. Hayden, R. Raimondi, M. E. Flatte', and G. Vignale

TL;DR
This paper models the intrinsic spin Hall effect at oxide interfaces using a simple asymmetric triangular potential well, revealing non-zero spin Hall conductivity influenced by well symmetry and spin-orbit coupling.
Contribution
It demonstrates that an asymmetric triangular well supports a non-vanishing intrinsic spin Hall effect, contrasting with wedge-shaped wells where it vanishes due to vertex corrections.
Findings
Spin Hall conductivity increases as the well becomes more symmetric.
Conductivity is proportional to the square of the spin-orbit coupling constant.
At low carrier density, conductivity depends on effective mass renormalization.
Abstract
An asymmetric triangular potential well provides the simplest model for the confinement of mobile electrons at the interface between two insulating oxides, such as LaAlO_3 and SrTiO_3 (LAO/STO). These electrons have been recently shown to exhibit a large spin-orbit coupling of the Rashba type, i.e., linear in the in-plane momentum. In this paper we study the intrinsic spin Hall effect due to Rashba coupling in an asymmetric triangular potential well. Besides splitting each subband into two branches of opposite helicity, the spin-orbit interaction causes the wave function in the direction perpendicular to the plane of the quantum well (the z direction) to depend on the in-plane wave vector k. In contrast to the extreme asymmetric case, i.e., the wedge-shaped quantum well, for which the intrinsic spin Hall effect vanishes due to vertex corrections, we find that the asymmetric well…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor materials and devices · Quantum and electron transport phenomena
