Atomistic Full-Band Simulations of Monolayer MoS2 Transistors

TL;DR

This paper uses atomistic full-band quantum transport simulations to analyze the performance of monolayer MoS2 transistors, revealing their potential for near-ideal switching behavior but limited transconductance and possible negative differential resistance.

Contribution

It provides the first comprehensive atomistic full-band simulation study of monolayer MoS2 MOSFETs, highlighting their advantages and limitations in device performance.

Findings

Near-ideal subthreshold slope in MoS2 MOSFETs

Suppression of DIBL and GIDL effects

Limited transconductance and potential NDR phenomena

Abstract

We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, and suppression of drain-induced barrier lowering (DIBL) and gate-induced drain leakage (GIDL). However, these full-band simulations also exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS2.