Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot

TL;DR

This paper reports the development of a silicon MOS-based single hole transistor with independent gate control, demonstrating Coulomb blockade and the potential for scalable quantum dot arrays in CMOS-compatible fabrication.

Contribution

Introduces a multi-layer gate design enabling independent control of hole quantum dots in silicon MOS devices, compatible with standard CMOS processes.

Findings

Observed clear Coulomb blockade oscillations.

Depleted the dot to the few-hole regime with visible excited states.

Potential to induce multiple quantum dots in the architecture.

Abstract

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and reservoirs. Clear Coulomb blockade oscillations are observed, and source-drain biasing measurements show that it is possible to deplete the dot down to the few hole regime, with excited states clearly visible. The architecture is sufficiently versatile that a second hole dot could be induced adjacent to the first one.