Active control of magnetoresistance of organic spin valves using ferroelectricity
Dali Sun, Mei Fang, Xiaoshan Xu, Lu Jiang, Hangwen Guo, Yanmei Wang,, Wenting Yang, Lifeng Yin, Paul C. Snijders, T. Z. Ward, Zheng Gai, X.-G., Zhang, Ho Nyung Lee, and Jian Shen

TL;DR
This paper demonstrates active control of organic spin valve resistance through a ferroelectric interfacial layer, enabling electric and magnetic field tuning and revealing new insights into spin transport mechanisms.
Contribution
It introduces a novel method to tune organic spin valves using ferroelectric layers, adding electric polarization as a control parameter beyond magnetic alignment.
Findings
Resistance can be controlled by ferroelectric polarization.
Magnetoresistance depends on bias voltage history.
MR sign reverses with ferroelectric polarization.
Abstract
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the…
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