Characterization and simulation of resistive-MPGDs with resistive strip and layer topologies

TL;DR

This paper investigates the response of resistive-MPGD detectors with strip and layer topologies, using two methods to model charge diffusion, aiding optimization for high-rate particle detection applications.

Contribution

It introduces two novel methods—finite element modeling and semi-analytical approach—for characterizing charge diffusion in resistive-MPGD detectors.

Findings

FEM method effectively models charge propagation in strip detectors.

Semi-analytical approach provides quick estimates of charge evolution.

Results help optimize detector design parameters for specific environments.

Abstract

The use of resistive technologies to MPGD detectors is taking advantage for many new applications, including high rate and energetic particle flux scenarios. The recent use of these technologies in large area detectors makes necessary to understand and characterize the response of this type of detectors in order to optimize or constrain the parameters used in its production, material resistivity, strip width, or layer thickness. The values to be chosen will depend on the environmental conditions in which the detector will be placed, and the requirements in time resolution and gain, improving the detector performance for each given application. We present two different methods to calculate the propagation of charge diffusion through different resistive topologies; one is based on a FEM of solving the telegraph equation in our particular strip detector scheme, the other is based on a semi-analytical approach of charge diffusion and is used to determine the charge evolution in a resistive layer.