Benchtop Fabrication of Memristive Atomic Switch Networks

TL;DR

This paper demonstrates a simple benchtop method to fabricate memristive atomic switch networks using solution-phase electroless deposition, enabling accessible study of ionic resistive switches without complex lithography.

Contribution

It introduces a straightforward fabrication technique for atomic switch networks, bypassing traditional lithography, facilitating broader research in memristive systems.

Findings

Devices exhibit nonlinear hysteretic switching behavior.

Activation involves a bias-induced forming step.

Method simplifies fabrication process.

Abstract

Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems.