Investigation of quantum-dimensional structure parameters by X-ray optical, scanning tunneling and transmission electron microscopy
A. G. Touryanski, V. M. Senkov, S. S. Gizha, L. V. Arapkina, V. A., Chapnin, K. V. Chizh, V. P. Kalinushkin, M. S. Storozhevykh, O. V. Uvarov,, and V. A. Yuryev
TL;DR
This paper explores the structural parameters of Ge/Si(001) heterostructures with dense Ge quantum dots using advanced X-ray and electron microscopy techniques.
Contribution
It introduces the application of two-wavelength X-ray reflectometry for detailed analysis of quantum dot structures.
Findings
Determined quantum dot layer thickness and density.
Revealed structural uniformity of Ge/Si(001) heterostructures.
Validated microscopy techniques for quantum dot characterization.
Abstract
Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented
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Taxonomy
TopicsSurface and Thin Film Phenomena · Advanced Materials Characterization Techniques · Advanced Electron Microscopy Techniques and Applications