Kinetics of excitations on the Fermi arcs in underdoped cuprates at low temperature

TL;DR

This paper investigates the electronic behavior of underdoped cuprates, showing that Fermi arcs contribute to Fermi-liquid resistivity through specific scattering processes, challenging the reconstructed Fermi surface concept.

Contribution

It provides a rigorous kinetic equation solution for Fermi arcs and clarifies their role in resistivity and Hall effect in underdoped cuprates, contrasting with the reconstructed Fermi surface idea.

Findings

Fermi arcs contribute to Fermi-liquid resistivity via Umklapp scattering.

Hall coefficient indicates positive effective carrier number on arcs.

Reconstructed Fermi surface concept is inconsistent with observed FL-like resistivity.

Abstract

The Fermi-liquid-like (FL) resistivity recently observed in clean HgBa2CuO4 below the pseudogap temperature was related to carriers at the nodal points on the Fermi surface [4]. We show that this necessitates important implications for the electronic spectrum of underdoped (UD) cuprates in whole. Photoemission experiments picture the spectrum as of metallic arcs separated from each other by regions with large energy gaps. We solved the kinetic equation in such model rigorously. The Fermi arcs carriers contribute to FL resistivity, if scattering between the opposite nodal points admits the Umklapp processes. The Hall coefficient defines the effective number of carriers on arcs and has the positive sign. For clean materials the expression is applicable only at weak magnetic fields. We discuss the Fermi arcs concept further in light of recent experimental findings and argue that the idea of reconstructed FS in UD cuprates is not consistent with the FL-like resistivity.