Charge carrier relaxation model in hopping system

TL;DR

This paper presents an analytical model for charge carrier relaxation in hopping systems, explaining how electric field, temperature, and disorder influence relaxation phenomena, with results aligning well with experimental data.

Contribution

The paper introduces a new analytical model that describes charge carrier relaxation considering material disorder, electric field, and temperature effects in hopping systems.

Findings

Electric field and temperature enhance relaxation effects.

Material disorder weakens relaxation phenomena.

Model aligns well with experimental data for organic semiconductors.

Abstract

The relaxation phenomena of charge carriers in hopping system have been demonstrated and investigated theoretically. An analytical model describing the charge carrier relaxation is proposed based on the hopping transport theory. The relation between the material disorder, electric field and temperature and the relaxation phenomena has been discussed in detail, respectively. The calculated results reveal that the increase of electric field and temperature can promote the relaxation effect in disordered systems, while the increase of material disorder will weaken the relaxation. The proposed model can explain well the stretched-exponential law by adopting the appropriate parameters. The calculation shows a good agreement with the experimental data for organic semiconductors.