A silicon electromechanical photodetector

TL;DR

This paper introduces a silicon-based electromechanical device that converts optical signals into electrical signals using a resonant micro-resonator, offering a potential on-chip photodetector alternative with reduced dark current issues.

Contribution

It presents a novel silicon micro-resonator device that detects optical intensity modulation via mechanical resonance, bypassing dark current problems of traditional photodetectors.

Findings

Successfully converts near-IR optical modulation at 174.2MHz and 1.198GHz.

Operates within the full-width-at-half-maximum bandwidth of the mechanical resonance.

Demonstrates potential for integrated silicon photodetectors with reduced dark current.

Abstract

Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.