Excitonic parameters of InxGa1-xAs-GaAs heterostructures with quantum wells at low temperatures
N.M. Litovchenko, D.V. Korbutyak, O.M. Strilchuk
TL;DR
This paper investigates the excitonic properties of InxGa1-xAs-GaAs heterostructures with quantum wells at low temperatures, using photoluminescence measurements and theoretical analysis to understand their characteristics.
Contribution
It provides a combined experimental and theoretical study of excitonic parameters in heterostructures with quantum wells at low temperatures, highlighting the effects of growth parameters.
Findings
Determined excitonic parameters from photoluminescence spectra.
Correlated growth parameters with optical properties.
Validated theoretical models with experimental data.
Abstract
Characteristics of GaAs/InGaAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence spectra and their corresponding theoretical analysis.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices