Quantum resistance metrology using graphene

TL;DR

This paper reviews recent advances in quantum resistance standards using graphene, highlighting its unique properties, high-precision comparisons with traditional materials, and potential applications in metrology.

Contribution

It provides a comprehensive review of graphene-based quantum resistance metrology, emphasizing the superior results with epitaxial graphene on SiC and comparing different graphene systems.

Findings

Highest precision Hall resistance comparison between graphene and GaAs

Epitaxial graphene on SiC yields the best resistance standard results

Discussion of potential applications of graphene in various metrological fields

Abstract

In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology.