Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices

TL;DR

This paper reports on the fabrication of nitrogen-doped ultra-nano-crystalline diamond Hall-bar devices using CVD and lithography, and investigates their electrical properties at low temperatures.

Contribution

It introduces a novel fabrication process for N-UNCD Hall-bar devices and provides detailed electrical characterization at cryogenic temperatures.

Findings

Successful fabrication of N-UNCD Hall-bar devices

Electrical properties measured at various low temperatures

Potential applications in quantum and electronic devices

Abstract

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.