Dielectric response of laser-excited silicon
S.A. Sato, K.Yabana, Y.Shinohara, T. Otobe, and G.F. Bertsch

TL;DR
This study uses time-dependent density functional theory to analyze the dielectric response of laser-excited silicon, comparing it with thermal and Drude models, revealing short carrier lifetimes and polarization-dependent effects.
Contribution
It provides a detailed TDDFT-based analysis of silicon's dielectric response post-laser excitation, highlighting limitations of classical models and polarization effects.
Findings
TDDFT accurately models laser-excited silicon dielectric response.
Short Drude lifetimes (6-13 fs) are observed at high fields.
Dielectric response depends on pump and probe polarization, with negative imaginary parts.
Abstract
We calculate the dielectric response of crystalline silicon following irradiation by a high-intensity laser pulse, modeling the dynamics by time-dependent density functional theory (TDDFT). The pump-probe measurements are numerically simulated by solving the time-dependent Kohn-Sham equation with the pump and probe fields included as external fields. As expected, the excited silicon shows features of a particle-hole plasma in its response. We compare the calculated response with a thermal model and with a simple Drude model. The thermal model requires only a static DFT calculation to prepare electronically excited matter and agrees rather well with the TDDFT for the same particle-hole density. The Drude model with two fitted parameters (electron effective mass and collision time) also shows fair agreement at the lower excitation energies; the fitted effective masses are consistent with…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
