The role of elastic and inelastic processes in the temperature dependence of Hall induced resistance oscillations in strong magnetic fields

TL;DR

This paper presents a model explaining how elastic and inelastic processes influence the temperature dependence of Hall-induced resistance oscillations in strong magnetic fields, aligning with experimental observations.

Contribution

It introduces a comprehensive quantum model incorporating both elastic and inelastic scattering effects to explain temperature-dependent magnetoresistance oscillations.

Findings

Inelastic scattering rate follows a T^2 dependence.

Model accurately reproduces experimental features.

Both elastic and inelastic processes are crucial.

Abstract

We develop a model of magnetoresistance oscillations induced by the Hall field in order to study the temperature dependence observed in recent experiments. The model is based on the solution of the von Neumann equation incorporating the exact dynamics of two-dimensional damped electrons in the presence of arbitrarily strong magnetic and dc electric fields, while the effects of randomly distributed neutral and charged impurities are perturbatively added. Both the effects of elastic impurity scattering as well as those related to inelastic processes play an important role. The theoretical predictions correctly reproduce the main experimental features provided that the inelastic scattering rate obeys a $T^2$ temperature dependence, consistent with electron-electron interaction effects.