Time dependent quantum transport through Kondo correlated quantum dots

TL;DR

This paper reviews recent advances in understanding time-dependent quantum transport in Kondo regime quantum dots, highlighting effects of contact density of states, electron-phonon interactions, and thermoelectric phenomena relevant for future transistors.

Contribution

It provides a comprehensive review of how various factors influence quantum transport in Kondo quantum dots under time-dependent conditions, advancing the understanding of their potential in next-generation electronics.

Findings

Density of states affects conductance during Kondo regime transition

Strong electron-phonon coupling modifies instantaneous conductance

Thermoelectric effects are significant in time-dependent Kondo transport

Abstract

In this article, we review recent work about time dependent quantum transport through a quantum dot in Kondo regime. This represents a major step towards designing next generation transistors that are expected to replace current MOSFET's in a few years. We first discuss the effects of the density of states of gold contacts on the instantaneous conductance of an asymmetrically coupled quantum dot that is abruptly moved into Kondo regime via a gate voltage. Next, we investigate the effect of strong electron-phonon coupling on the dot on the instantaneous conductance. Finally, we discuss thermoelectric effects using linear response Onsager relations for a quantum dot that is either abruptly moved into Kondo regime or driven sinusoidally via a gate voltage. We explain encountered peculiarities in transport based on the behaviour of the density of states of the dot and the evolution of the Kondo resonance.