Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

TL;DR

This paper reports progress in opto-electronic characterization of InP nanowire transistors at milli-Kelvin temperatures, including transport measurements and the operation of a red LED for device analysis.

Contribution

It demonstrates the operation of InP nanowire transistors and a red LED at ultra-low temperatures, advancing the understanding of their opto-electronic properties.

Findings

InP nanowires exhibit measurable electronic transport down to 40 K.

Red LED functions successfully at liquid-Helium temperatures.

Progress towards low-temperature opto-electronic device characterization.

Abstract

In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.