More Realistic Hamiltonians for the Fractional Quantum Hall Regime in GaAs and Graphene
Michael R. Peterson, Chetan Nayak

TL;DR
This paper develops realistic effective Hamiltonians for electrons in the fractional quantum Hall regime in GaAs and graphene, incorporating Landau level and subband mixing effects that influence particle-hole symmetry and interaction strength.
Contribution
It introduces comprehensive Hamiltonians that include Landau level and subband mixing effects, crucial for understanding fractional quantum Hall states in GaAs and graphene.
Findings
Landau level and subband mixing break particle-hole symmetry in GaAs.
In graphene, Landau level mixing breaks particle-hole symmetry outside the lowest level.
Landau level mixing parameter in graphene is order one, independent of magnetic field.
Abstract
We construct an effective Hamiltonian for electrons in the fractional quantum Hall regime for GaAs and graphene that takes into account Landau level mixing (for both GaAs and graphene) and subband mixing (for GaAs, due to the nonzero width of the quantum well). This mixing has the important qualitative effect of breaking particle-hole symmetry as well as renormalizing the strength of the interparticle interactions. Both effects could have important consequences for the prospect that the fractional quantum Hall effect at is described by states that support non-Abelian excitations such as the Moore-Read Pfaffian or anti-Pfaffian states. For GaAs, Landau level and subband mixing break particle-hole symmetry in all Landau levels and subband mixing, due to finite thickness, causes additional short-distance softening of the Coulomb interaction, further renormalizing the Hamiltonian;…
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