Fractional Quantum Hall Phase Transitions and Four-flux Composite Fermions in Graphene
Benjamin E. Feldman, Andrei J. Levin, Benjamin Krauss, Dmitry Abanin,, Bertrand. I. Halperin, Jurgen H. Smet, Amir Yacoby

TL;DR
This paper investigates fractional quantum Hall states in ultraclean graphene, revealing phase transitions and negative compressibility regions, and models these phenomena using crossing Landau levels of composite particles.
Contribution
It provides the first detailed local electronic compressibility measurements of fractional quantum Hall states in graphene, uncovering phase transitions and proposing a crossing Landau level model.
Findings
Observation of fractional quantum Hall states near v = -1/2 and -1/4
Detection of phase transitions with negative compressibility
Persistence of oscillations near v = -1/2
Abstract
Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of controlled phase transitions among them. In especially clean samples, electron-electron interactions were recently shown to produce surprising patterns of symmetry breaking and phase transitions in the integer quantum Hall regime. Although a series of robust fractional quantum Hall states was also recently observed in graphene, their rich phase diagram and tunability have yet to be fully explored. Here we report local electronic compressibility measurements of ultraclean suspended graphene that reveal a multitude of fractional quantum Hall states surrounding filling factors v = -1/2 and -1/4. In several of these states, we observe phase transitions…
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