Electrically tunable three-dimensional g-factor anisotropy in single InAs self-assembled quantum dots

TL;DR

This study investigates the three-dimensional anisotropy of the g-factor in single InAs quantum dots and demonstrates its electrical tunability via a side-gate, revealing dependence on orbital states and confinement anisotropy.

Contribution

It provides the first detailed analysis of 3D g-factor anisotropy in single InAs quantum dots and shows electrical control over this property.

Findings

g-factor anisotropy depends on orbital state

Electrical modulation of g-factor achieved with side-gate

Anisotropy linked to 3D confinement of quantum dots

Abstract

Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential.