Theory of helicity-sensitive terahertz radiation detection by field effect transistors
K. S. Romanov, M.I. Dyakonov

TL;DR
This paper develops a theoretical model explaining how field effect transistors detect the helicity of terahertz radiation through antenna-induced signal mixing, highlighting dependencies on device parameters.
Contribution
It introduces a comprehensive theory based on the two antenna model to explain helicity-sensitive detection in FETs, including quantitative predictions.
Findings
Helicity-sensitive photoresponse depends on antenna impedance.
The response varies with gate length and voltage.
The theory matches experimental observations.
Abstract
Within the two antenna model, we develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect arises because of the mixing of the ac signals produced in the channel by the two antennas. We calculate the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage.
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