High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

TL;DR

This paper demonstrates high-performance field-effect transistors using directly CVD-grown single-crystal MoS2, achieving high mobility and on/off ratios comparable to exfoliated layers, highlighting CVD's potential for high-quality 2D material synthesis.

Contribution

It introduces a CVD method to produce high-quality, single-crystal MoS2 layers directly on substrates, avoiding grain boundary issues and contamination, with performance comparable to exfoliated MoS2.

Findings

Mobility of ~17 cm2V-1s-1 in bilayer MoS2 FETs

On/off ratio of ~10^8 achieved

CVD-grown MoS2 quality rivals exfoliated layers

Abstract

We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobility is ~17 cm2V-1s-1 and the on/off current ratio is ~108, which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS2 atomic layers deposited directly on SiO2 is comparable to the best exfoliated MoS2 flakes. It shows that CVD is a viable method to synthesize high quality MoS2 atomic layers.