Inter-plane resistivity of isovalent doped BaFe$_2$(As$_{1-x}$P$_x$)$_2$
M. A. Tanatar, K. Hashimoto, S. Kasahara, T. Shibauchi, Y. Matsuda, R., Prozorov

TL;DR
This study measures the inter-plane resistivity of BaFe$_2$(As$_{1-x}$P$_x$)$_2$ across various doping levels, revealing a linear temperature dependence at optimal doping and contrasting behavior with electron-doped counterparts, highlighting differences in scattering mechanisms.
Contribution
It provides the first detailed analysis of inter-plane resistivity in isovalently doped BaFe$_2$(As$_{1-x}$P$_x$)$_2$, showing distinct temperature dependence from electron-doped variants.
Findings
Maximum in $ ho_c(T)$ shifts to higher temperatures with doping.
At optimal doping, $ ho_c(T)$ is linear in temperature.
Transport behavior differs significantly from electron-doped compounds.
Abstract
Temperature-dependent inter-plane resistivity, , was measured for the iron-based superconductor BaFe(AsP) over a broad isoelectron phosphorus substitution range from =0 to =0.60, from non-superconducting parent compound to heavily overdoped superconducting composition with . The features due to structural and magnetic transitions are clearly resolved in of the underdoped crystals. A characteristic maximum in , found in the parent BaFeAs at around 200 K, moves rapidly with phosphorus substitution to high temperatures. At the optimal doping, the inter-plane resistivity shows -linear temperature dependence without any cross-over anomalies, similar to the previously reported in-plane resistivity. This observation is in stark contrast with dissimilar temperature dependences found at optimal doping in…
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