Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2

TL;DR

This study investigates how Raman phonon modes in few-layer MoS2 change with temperature and measures its thermal conductivity, providing insights into its thermal properties for potential electronic applications.

Contribution

It presents the temperature dependence of Raman modes and estimates the thermal conductivity of high-quality few-layer MoS2 prepared via vapor-phase synthesis.

Findings

Raman mode frequencies vary linearly with temperature.

First order temperature coefficients are quantified for E2g and A1g modes.

Thermal conductivity of suspended FLMS at room temperature is about 52 W/mK.

Abstract

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be about 52 W/mK.