Features of charge transport in Mo/n-Si structures with a Shottky barrier

TL;DR

This study investigates the temperature-dependent charge transport properties of Mo/n-Si Schottky barrier structures, revealing how barrier height and ideality factor vary and identifying thermionic emission and tunneling as key current mechanisms.

Contribution

The paper provides experimental analysis of temperature effects on Schottky barrier parameters and applies an inhomogeneous contact model to interpret the results.

Findings

Barrier height increases with temperature

Ideality factor decreases with temperature

Thermionic emission and tunneling dominate reverse bias current

Abstract

The forward and reverse current-voltage characteristics of the Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. It is found that Shottky barrier height increases and time ideality factor decreases with temperature increasing. The obtained results have been analyzed in the framework of inhomogeneous contact model. The mean and standart deviation of Shottky barrier heigh are determined: 0.872 V and 0.099 V at $=130-220 K and 0.656 V and 0.036 V at T=230-330 K respectively. It is shown that at reverse bias the main processes of current flow are the thermionic emission over an inhomogeneous barrier and tunneling.