NoN analyticity of Hanle effect at zero magnetic field in a quantum dot
Kozlov Gleb

TL;DR
This paper presents a simple 4-level model explaining the non-analytic behavior of the Hanle effect at zero magnetic field in InGaAs quantum dots, matching experimental observations.
Contribution
It introduces a minimal 4-level model that captures the non-analytic Hanle effect behavior at zero magnetic field in quantum dots.
Findings
The model explains the fracture of the Hanle curve at zero magnetic field.
Quantitative agreement with experimental data is achieved.
The non-analytic behavior is successfully described by the model.
Abstract
Non analytic behaviour of Hanle effect in InGaAs quantum dots is described in terms of a simple 4-level model. Despite simplicity the model makes it possible to explain the observed fracture of Hanle curve at zero magnetic field and obtain quantitative agreement with the experiment.
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Taxonomy
TopicsQuantum and electron transport phenomena · Magnetic properties of thin films · Semiconductor Quantum Structures and Devices
