Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

TL;DR

This paper reports a record maximum oscillation frequency of 70 GHz in transistors made from C-face epitaxial graphene on SiC, demonstrating its superior potential for high-frequency electronics.

Contribution

It introduces the first record-breaking fmax in C-face epitaxial graphene transistors, surpassing previous Si-face graphene devices through optimized design.

Findings

Achieved 70 GHz fmax in C-face epitaxial graphene transistors

Demonstrated superior electronic performance over Si-face graphene

Used advanced transistor design with high-κ dielectric T-gate and self-aligned contacts

Abstract

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.