Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

TL;DR

This paper demonstrates a magnetic memory device using IrMn/MgO/Ta tunnel junctions that stores information via field-cooling, with resistance states set by cooling orientation and robust against external magnetic fields.

Contribution

It introduces a ferromagnet-free magnetic memory device based on antiferromagnetic materials, showing resistance state control through field-cooling.

Findings

Resistance variation up to 10% with field cooling

Metastable states are insensitive to magnetic fields

Device functions as a robust, electrically readable memory

Abstract

Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.