Hartree-Fock problem of an electron-hole pair in the quantum well GaN
L.O. Lokot

TL;DR
This paper investigates the optical properties of GaN/AlGaN quantum wells, revealing a significant red-shift of exciton peaks with increasing electron-hole density due to valence band effects, using Hartree-Fock calculations.
Contribution
It provides microscopic calculations of absorption and gain spectra in GaN quantum wells, highlighting the impact of valence band structure on exciton behavior and spectral shifts.
Findings
Red shift of exciton peaks with increasing density in wurtzite quantum wells
Difference in spectral behavior between parabolic and wurtzite structures
Hartree-Fock approximation shows a red shift in gain spectrum
Abstract
We present microscopic calculations of the absorption spectra for GaN/Al(x)Ga(1-x)N quantum well systems. Whereas the quantum well structures with the parabolic law of dispersion exhibit the usual bleaching of an exciton resonance without shifting a spectral position, the significant red-shift of an exciton peak is found with increasing the electron-hole gas density for a wurtzite quantum well. The energy of the exciton resonance for a wurtzite quantum well is found. The obtained results can be explained by the influence of the valence band structure on quantum confinement effects. The optical gain spectrum in the Hartree-Fock approximation and the Sommerfeld enhancement are calculated. A red shift of the gain spectrum in the Hartree-Fock approximation with respect to the Hartree gain spectrum is found.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices
