Quantitatively Enhanced Reliability and Uniformity of High-{\kappa} Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers

TL;DR

This study demonstrates that using self-assembled seeding layers enables the growth of high-{ m f ext{k}} dielectric layers on graphene with enhanced reliability and uniformity, crucial for advanced electronic applications.

Contribution

It introduces a novel seeding method with organic monolayers for improved dielectric quality on graphene, supported by comprehensive statistical analysis.

Findings

High uniformity Weibull shape parameter {eta} > 25

Large breakdown strength EBD > 7 MV/cm

Comparable dielectric performance on graphene and Si substrates

Abstract

The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-{\kappa} top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogenous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter {\beta} > 25) and large breakdown strengths (Weibull scale parameter, EBD > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates.