Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

TL;DR

This paper reports the fabrication of flexible graphene FETs that operate at gigahertz frequencies with high strain tolerance, advancing flexible RF electronics.

Contribution

It demonstrates the first graphene FETs on flexible substrates achieving gigahertz RF power gain with strain above 0.5%.

Findings

Achieved fT of 10.7 GHz and fmax of 3.7 GHz in flexible GFETs.

Strain tolerance up to 1.75% without performance loss.

First report of gigahertz RF power gain in flexible graphene devices.

Abstract

The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene field-effect transistors (GFETs) on flexible substrates from graphene grown by chemical vapor deposition (CVD). Our devices demonstrate unity-current-gain frequencies, fT, and unity-power-gain frequencies, fmax, up to 10.7 and 3.7 GHz, respectively, with strain limits of 1.75%. These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5%. As such, they demonstrate the potential of CVD graphene to enable a broad range of flexible electronic technologies which require both high-flexibility and RF operation.