Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate

TL;DR

This paper investigates the fabrication and electrical properties of graphene nanoribbons on hexagonal boron nitride, revealing improved mobility in micron-sized devices but similar transport in nanoribbons compared to silicon dioxide substrates, emphasizing edge effects.

Contribution

It provides a detailed comparison of graphene nanoribbons on boron nitride versus silicon dioxide, highlighting the influence of edges on transport properties.

Findings

Micron-sized graphene devices on hBN have higher mobility.

Nanoribbon transport is similar on hBN and SiO2 substrates.

Edges significantly influence transport in reactive-ion-etched graphene nanodevices.

Abstract

We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive ion-etched graphene nanodevices.