Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering
Roberto Grassi, Antonio Gnudi, Ilaria Imperiale, Elena Gnani, Susanna, Reggiani, Giorgio Baccarani

TL;DR
This paper introduces a mode space method for efficient atomistic Green's function simulations of graphene nanoribbon FETs with phonon scattering, significantly reducing computation time while maintaining accuracy.
Contribution
The authors develop a decoupled mode space approach for atomistic simulations that accurately includes electron-phonon interactions and improves computational efficiency.
Findings
Speed-up factor of 40 for a 1.5-nm-wide device
Decoupled modes retain accuracy in ideal electrostatic conditions
Coupled mode space approach needed for disordered potentials
Abstract
In this paper, we present a mode space method for atomistic non-equilibrium Green's function simulations of armchair graphene nanoribbon FETs that includes electron-phonon scattering. With reference to both conventional and tunnel FET structures, we show that, in the ideal case of a smooth electrostatic potential, the modes can be decoupled in different groups without any loss of accuracy. Thus, inter-subband scattering due to electron-phonon interactions is properly accounted for, while the overall simulation time considerably improves with respect to real-space, with a speed-up factor of 40 for a 1.5-nm-wide device. Such factor increases with the square of the device width. We also discuss the accuracy of two commonly used approximations of the scattering self-energies: the neglect of the off-diagonal entries in the mode-space expressions and the neglect of the Hermitian part of the…
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