Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator
H. Li, Y. R. Song, Meng-Yu Yao, Fengfeng Zhu, Canhua Liu, C. L. Gao,, Jin-Feng Jia, Dong Qian, X. Yao, Y. J. Shi, and D. Wu
TL;DR
This study investigates how varying carrier densities affect magnetic properties in iron-doped Bi2Se3 topological insulators, revealing that bulk ferromagnetism is not intrinsic and is independent of carrier type or density.
Contribution
It demonstrates that bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and is unaffected by carrier density or type, challenging previous assumptions.
Findings
Ferromagnetic states achieved with different carrier densities
Effective magnetic moment per Fe atom is about 0.07μB
Bulk ferromagnetism is not intrinsic in Fe-doped Bi2Se3
Abstract
The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07B. Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density.
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