Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance

TL;DR

This paper presents a method using Electron Spin Resonance to accurately determine magnetic susceptibility in highly doped semiconductors, accounting for skin depth effects, with application to arsenic-doped germanium near the insulator-metal transition.

Contribution

It introduces a novel ESR-based procedure for magnetic susceptibility measurement in high doped semiconductors considering skin layer effects.

Findings

Effective ESR method for high doped semiconductors

Application to arsenic-doped germanium near phase transition

Accurate susceptibility determination considering skin depth

Abstract

Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.