Exceptional ballistic transport in epitaxial graphene nanoribbons
Jens Baringhaus, Ming Ruan, Frederik Edler, Antonio Tejeda, Muriel, Sicot, Amina Taleb Ibrahimi, Zhigang Jiang, Edward Conrad, Claire Berger,, Christoph Tegenkamp, Walt A.de Heer

TL;DR
Epitaxial graphene nanoribbons exhibit room temperature ballistic transport over micrometer scales with exceptionally high mobility, surpassing theoretical limits of 2D graphene, and behave as quantum waveguides with distinct temperature-dependent conduction modes.
Contribution
This study demonstrates that epitaxial graphene nanoribbons grown on SiC are not semiconductors but exhibit unprecedented ballistic transport properties at room temperature, with mobilities exceeding one million.
Findings
Mobility exceeding one million and sheet resistance below 1 Ohm.
Ballistic transport observed over lengths up to 16 micrometers.
Transport dominated by two ground state waveguide modes, one temperature-independent and one thermally activated.
Abstract
Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene…
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