Characterization of the Quantized Hall Insulator Phase in the Quantum Critical Regime

TL;DR

This study maps the conductivity and resistivity in a disordered Hofstadter model to characterize the Quantized Hall Insulator phase during the quantum critical regime of the plateau-insulator transition, aligning theory with experimental observations.

Contribution

It provides a theoretical analysis of the QHI phase in the quantum critical regime, supporting experimental characterizations with detailed numerical modeling.

Findings

Detection and analysis of the Quantized Hall Insulator phase.

Reproduction of key experimental features of the IQHE transition.

Validation of the experimental characterization of the QHI phase.

Abstract

The conductivity $\sigma$ and resistivity $\rho$ tensors of the disordered Hofstadter model are mapped as functions of Fermi energy $E_F$ and temperature $T$ in the quantum critical regime of the plateau-insulator transition (PIT). The finite-size errors are eliminated by using the non-commutative Kubo-formula. The results reproduce all the key experimental characteristics of this transition in Integer Quantum Hall (IQHE) systems. In particular, the Quantized Hall Insulator (QHI) phase is detected and analyzed. The presently accepted characterization of the QHI phase in the quantum critical regime, based entirely on experimental data, is fully supported by our theoretical investigation.