High-frequency response of GaN in moderate electric and magnetic fields: Interplay between cyclotron and optical phonon transient time resonances

TL;DR

This paper investigates the high-frequency behavior of non-equilibrium electrons in GaN under electric and magnetic fields, revealing resonances that could enable advanced THz optoelectronic devices.

Contribution

It provides the first detailed analysis of the interplay between cyclotron and optical phonon transit-time resonances in GaN at THz frequencies.

Findings

Identification of cyclotron and optical phonon transit-time resonances in GaN.

Spectral features of THz transmission and absorption influenced by these resonances.

Potential for developing field-controlled THz optoelectronic devices.

Abstract

We have studied the high-frequency properties of the non-equilibrium electron gas in GaN samples subjected to electric and magnetic fields. Spectra of the complex tensor of the dynamical mobility have been calculated for THz frequency range. For the compensated GaN and low temperatures, in the intervals of electric fields of the few $kV/cm$ and magnetic fields of the few $T$ the existence of the cyclotron and optical phonon transit-time resonances has been identified. We have shown that interplay of two resonances gives rise to specific spectra of THz transmission and absorption (or gain). We suggest that experimental investigation of these effects will facilitate elaboration of field controlled devices for THz optoelectronics.