Response to comment "Measurement of mobility in dual-gated MoS2 transistors"

TL;DR

This paper responds to critiques of previous mobility measurements in monolayer MoS2 transistors, discussing potential errors and clarifying the impact of dielectric screening on mobility enhancement.

Contribution

It provides a detailed response to comments on mobility estimation methods in MoS2 transistors, including error analysis and methodological clarifications.

Findings

Estimated mobility values and their potential errors

Impact of dielectric screening on mobility

Clarification of measurement methodology

Abstract

In our previous paper, we reported on switchable monolayer MoS2 transistors with a high on-off ratio and we claim that dielectric screening can be used to increase the mobility of monolayer MoS2. We estimated its mobility using a method previously applied by Lemme et al. to top-gated graphene nanoribbons. We discuss here the comments raised by M. Fuhrer and J. Hone in their post 1301.4288 and give our own estimates of the possible errors in previous mobility measurements and their origins.