Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors

TL;DR

This study demonstrates that chemically synthesized multilayer MoS2 can be used to create FETs with electrical properties comparable to those made from exfoliated MoS2, supporting the potential for scalable 2D semiconductor devices.

Contribution

It provides a direct comparison of electronic properties between chemically synthesized and exfoliated multilayer MoS2 FETs, showing their similar performance.

Findings

Chemically synthesized MoS2 FETs have mobility and on/off ratios comparable to exfoliated ones.

Structural analysis confirms the similarity between synthetic and exfoliated MoS2.

Differences in flat-band voltages suggest effects of chemical residues from synthesis.

Abstract

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.