Quantum anomalous Hall effect and tunable topological states in 3d transition metals doped silicene

TL;DR

This paper demonstrates the engineering of quantum anomalous Hall effect and tunable topological states in silicene doped with 3d transition metals, highlighting potential for electrically controllable topological phenomena.

Contribution

It introduces a method to induce quantum anomalous Hall effect in silicene through 3d transition metal doping, supported by analytical and computational models.

Findings

Stable quantum anomalous Hall effect in V-doped silicene.

Prediction of quantum valley Hall effect and tunable topological states.

Energy band inversion enabling electrical control of topological phases.

Abstract

We engineer quantum anomalous Hall effect in silicene via doping 3d transition metals. We show that there exists a stable quantum anomalous Hall effect in Vanadium doped silicene using both analytical model and Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our finding provides new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states.