Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films

TL;DR

This study investigates how carrier localization affects anisotropic magnetoresistance in NSSMO thin films, revealing the influence of A-site cation size and disorder on magnetic transport properties.

Contribution

It provides new insights into the relationship between A-site cation substitution, carrier localization, and AMR in NSSMO thin films.

Findings

Carrier localization increases with smaller A-site cation size.

Enhanced size disorder affects the magnitude of AMR.

Substitution influences magnetic transport behavior.

Abstract

The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.