Raman-scattering study of the phonon dispersion in twisted bi-layer graphene
J. Campos-Delgado, L. G. Can\c{c}ado, C. A. Achete, A. Jorio, J.-P., Raskin

TL;DR
This study demonstrates how superlattice-induced Raman scattering in twisted bi-layer graphene can be used to probe its phonon dispersion, revealing layer breathing vibrations despite the lack of stacking order.
Contribution
It introduces a novel Raman scattering method to analyze phonon dispersion in twisted bi-layer graphene using superlattice effects.
Findings
Superlattice-induced Raman scattering probes phonon dispersion.
Layer breathing vibrations are observed in tBLG.
The effect differs from double-resonance phenomena.
Abstract
Bi-layer graphene with a twist angle \theta\ between the layers generates a superlattice structure known as Moir\'{e} pattern. This superlattice provides a \theta-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bi-layer graphene (tBLG). The effect reported here is different from the broadly studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO' phonons) are observed.
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