Demonstration of a dressed-state phase gate for trapped ions

TL;DR

This paper demonstrates a robust entangling gate for trapped ions using a dressed-state phase scheme, achieving high fidelity and simplifying experimental requirements compared to previous methods.

Contribution

It experimentally implements a dressed-state phase gate for trapped ions, enhancing robustness and simplifying setup over prior entangling gate techniques.

Findings

Achieved Bell state fidelity of 0.974(4).

Method is robust against thermal excitations.

Includes dynamical decoupling from dephasing errors.

Abstract

We demonstrate a trapped-ion entangling-gate scheme proposed by Bermudez et al. [Phys. Rev. A 85, 040302 (2012)]. Simultaneous excitation of a strong carrier and a single-sideband transition enables deterministic creation of entangled states. The method works for magnetic field-insensitive states, is robust against thermal excitations, includes dynamical decoupling from qubit dephasing errors, and provides simplifications in experimental implementation compared to some other entangling gates with trapped ions. We achieve a Bell state fidelity of 0.974(4) and identify the main sources of error.