Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna
E. Kawakami, P. Scarlino, L. R. Schreiber, J. R. Prance, D. E. Savage,, M. G. Lagally, M. A. Eriksson, and L. M. K. Vandersypen

TL;DR
This paper demonstrates microwave excitation of a Si/SiGe quantum dot using an on-chip antenna, revealing photon-assisted tunneling effects and exploring magnetic field gradient generation with considerations of heating effects.
Contribution
It introduces on-chip microwave excitation for Si/SiGe quantum dots and investigates local magnetic field gradient generation and associated heating limitations.
Findings
Photon-assisted tunneling signatures observed
Small impact on charge stability
Bounds on magnetic field gradients established
Abstract
We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by heating of the reservoirs.
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