Parameter space for thermal spin-transfer torque
Johannes Christian Leutenantsmeyer, Marvin Walter, Vladyslav Zbarsky,, Markus M\"unzenberg, Rashid Gareev, Karsten Rott, Andy Thomas, G\"unter, Reiss, Patrick Peretzki, Henning Schuhmann, Michael Seibt, Michael Czerner,, Christian Heiliger

TL;DR
This paper investigates thermal spin-transfer torque in magnetic tunnel junctions with ultra-thin MgO barriers, demonstrating fabrication, characterization, and the potential for switching using laser-induced temperature gradients.
Contribution
It provides experimental fabrication and characterization of ultra-thin MgO barriers and demonstrates thermal spin-transfer torque switching with laser-generated temperature gradients.
Findings
Tunneling magneto resistance ratios of 55-64% for 3-4 monolayer barriers
Critical current for switching is 0.2 MA/cm$^2$
Temperature gradients of 20 K enable thermal switching
Abstract
Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with 3 monolayer thin MgO barriers. The quality of the interfaces at different growth conditions is studied quantitatively via high-resolution transmission electron microscopy imaging. We demonstrate tunneling magneto resistance ratios of up to 55% to 64% for 3 to 4 monolayer barrier thickness. Magnetic tunnel junctions with perpendicular magnetization anisotropy show spin-transfer torque switching with a critical current of 0.2 MA/cm. The thermally generated torque is calculated ab initio…
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