Effect of the Gate-dielectric stack on the quantum screening of the two-dimensional electron gas in silicon inversion layer

TL;DR

This paper develops an analytical theory to understand how dielectric stack structures influence the screening of Coulomb interactions in a two-dimensional electron gas within silicon inversion layers, impacting transistor mobility.

Contribution

It introduces a consistent analytical model accounting for dielectric stack effects on carrier screening, enhancing prediction accuracy of Coulomb-limited mobility in FETs.

Findings

Dielectric stack thickness significantly alters free carrier screening.

The model enables precise prediction of Coulomb interaction effects.

Screening modifications impact carrier mobility in silicon inversion layers.

Abstract

This article develops a consistent theory of free carrier screening of a two-dimensional electron gas in the silicon inversion layer in the presence of stacked layers of dielectric environment-commonly knows as gate stack in context of field-effect transistors. It is shown that the finite thickness and of dielectric stacks alters the free carrier screening, a crucial quantity, which determines screened coulomb interaction in the inversion layer, and ubiquitously appears in carrier transport theory in semiconductors. Results are analytical and can be used to accurate prediction Coulomb-interaction limited mobility in field-effect transistors.