Hybrid high-temperature superconductor-semiconductor tunnel diode

TL;DR

This paper demonstrates hybrid high-temperature superconductor-semiconductor tunnel diodes using a novel mechanical bonding technique, revealing tunneling spectra consistent with theoretical models and opening new avenues in superconductivity research and quantum technology.

Contribution

It introduces a new fabrication method for high-Tc superconductor-semiconductor junctions and provides experimental tunneling spectra aligning with theoretical predictions.

Findings

Successful fabrication of high-Tc superconductor-semiconductor tunnel diodes.

Tunneling spectra match theoretical models for d-wave superconductor-normal junctions.

Potential applications in unconventional superconductivity and quantum technologies.

Abstract

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.